Infineon BSC093N04LSGATMA1

Name: Infineon BSC093N04LSGATMA1
Brand: Infineon
SKU: BSC093N04LSGATMA1

Power MOSFET, N Channel, 40 V, 49 A, 9.3 mOhm, TDSON, 8 Pins, Surface Mount

$ 0.275

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	60R2507	46,932	1		0.958	0.598	0.389	0.300	0.300	16h
Newark	3	BSC093N04LSGATMA1	46,517	1	Cut Tape	0.275	0.275	0.275	0.275	0.275
Arrow Electronics	3	BSC093N04LSGATMA1	48,275	1		0.188	0.188	0.188	0.188	0.188
Future Electronics	2	BSC093N04LSGATMA1	25,000	5K	Tape & Reel					0.191
Rutronik		TMOSP8690	5,000	5K						0.233	22h

数据表和文档

下载 Infineon BSC093N04LSGATMA1 的数据表和制造商文档。

Newark

Datasheet10 页12 年前

_legacy Avnet

element14 APAC

iiiC

库存历史记录

3 个月趋势:

+4.24%

CAD 模型

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-12-12

Lifecycle StatusProduction (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon BSC093N04LSGATMA1 的描述。

Power MOSFET, N Channel, 40 V, 49 A, 9.3 mOhm, TDSON, 8 Pins, Surface Mount

EBV Elektronik

Trans MOSFET N-CH 40V 13A Automotive 8-Pin TDSON EP T/R

Verical

OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:49A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V; Power Dissipation:35W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon Technologies BSC093N04LSGATMA1.

Newark

MOSFET, N CH, 49A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:40V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:49A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

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