供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDMC8327L 的描述。
MOSFET, N-CH, 40V, 8MLP; Transistor Polarity:N Channel; Continuous Drain Current
ON SEMICONDUCTOR - FDMC8327L - MOSFET Transistor, N Channel, 14 A, 40 V, 0.0074 ohm, 10 V, 1.7 V
N-Channel PowerTrench® MOSFET 40V, 14A, 9.7mΩ
N-Channel 40 V 9.7 mO 26 nC SMT PowerTrench® Mosfet - MLP-8 3.3x3.3
Power Field-Effect Transistor, 12A I(D), 40V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 40V, 8MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight180 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9.7 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time2.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.85 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max9.7 mΩ
Rise Time2.2 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8.4 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm