供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-05
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2023-12-30
LTD Date2024-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
相关零件
VishaySUD50N04-8M8P-4GE3
SUD50N04-8M8P-4GE3 N-CHANNEL MOSFET TRANSISTOR, 50 A, 40 V, 3-PIN TO-252
STMicroelectronicsSTD17NF03LT4
N-channel 30 V, 0.038 Ohm, 17 A STripFET(TM) II Power MOSFET in DPAK package
STMicroelectronicsSTD26P3LLH6
P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package
描述
由其分销商提供的 onsemi FDD8647L 的描述。
PowerTrench® MOSFET, N-Channel, 40 V, 42 A, 9 mΩ
N-Channel 40 V 13 mOhm Surface Mount PowerTrench® Mosfet - TO-252
Power Field-Effect Transistor, 14A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 40V, 42A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0071ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Pow
This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.64 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation43 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max9 mΩ
Resistance13 MΩ
Rise Time3 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time19 ns
Turn-On Delay Time8 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm