供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-05-21
Lifecycle StatusNRND (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDMC6679AZ 的描述。
P-MOSFET transistor FDMC6679AZ Fairchild; -30V; -20A; 10mOhm; SMD MLP 3.3x3.3
P-Channel Power Trench® MOSFET -30V, -20A, 10mΩ
Trans MOSFET P-CH Si 30V 11.5A 8-Pin WDFN EP T/R / MOSFET P-CH 30V POWER33
FDMC6679AZ Series 30 V -20 A 10 mOhm P-Channel PowerTrench® MOSFET - MLP-8
MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0086ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight165.33333 mg
Technical
Continuous Drain Current (ID)11.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.97 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time14 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time63 ns
Turn-On Delay Time12 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm