价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDD20AN06A0 | 0 | 2500 | 4h | ||||||||
| Win Source | WS-FDD20AN06A0 | 2,630 | 85 | 2h | ||||||||
| Worldway Electronics | FDD20AN06A0 | 28,173 | 7 | Tape & Reel | 2h | |||||||
| Aztech | FDD20AN06A0 | 4,208 | 20h | |||||||||
| Anlinkda | FDD20AN06A0 | 68,420 | 1h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-07-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
相关零件
InfineonIPD088N06N3GBTMA1
Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount
STMicroelectronicsSTD35NF06LT4
N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package
InfineonIPD350N06LGBTMA1
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R / OptiMOS® Power-Transistor
STMicroelectronicsSTD30NF06LT4
N-Channel 60V - 0.022Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET
描述
由其分销商提供的 onsemi FDD20AN06A0 的描述。
N-Channel PowerTrench® MOSFET 60V, 45A, 20mΩ
TAPE REEL / TO-252AA, N-CH ULTRAFET TRENCH MOSFET 60V, 46A, 20MOHM
Trans MOSFET N-CH 60V 45A 3-Pin (2+Tab) TO-252 T/R
Power Field-Effect Transistor, 8A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET N-CH 60V 8A/45A TO252AA
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)8 A
Current Rating45 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance950 pF
Max Operating Temperature175 °C
Max Power Dissipation90 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max20 mΩ
Resistance47 mΩ
Rise Time98 ns
Turn-Off Delay Time23 ns
Voltage Rating (DC)60 V