Infineon IPD088N06N3GBTMA1

Name: Infineon IPD088N06N3GBTMA1
Brand: Infineon
SKU: IPD088N06N3GBTMA1

Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount

$ 0.426

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPD088N06N3GBTMA1	17,500					0.513	0.426	0.379	17h
Farnell	2	IPD088N06N3GBTMA1	0	1	Cut Tape	2.049*	1.618*	1.281*	1.066*	1.066*	5h
Verical		IPD088N06N3GBTMA1	17,500	651					0.532	0.474
Win Source		WS-IPD088N06N3GBTMA1	9,440	50				1.061	0.826	0.826	18h
Worldway Electronics		IPD088N06N3GBTMA1	18,094	7	Tape & Reel		0.088	0.085	0.081	0.081	1d

数据表和文档

下载 Infineon IPD088N06N3GBTMA1 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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供应链

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-11-26

Lifecycle StatusObsolete (Last Updated: 4 weeks ago)

LTB Date2021-12-31

LTD Date2022-06-30

描述

由其分销商提供的 Infineon IPD088N06N3GBTMA1 的描述。

Power MOSFET, N Channel, 60 V, 50 A, 0.0071 ohm, TO-252 (DPAK), Surface Mount

Avnet

Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, N-CH, 60V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

Farnell

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Infineon