Infineon IPD079N06L3GBTMA1

Name: Infineon IPD079N06L3GBTMA1
Brand: Infineon
SKU: IPD079N06L3GBTMA1

MOSFET Transistor, N Channel, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V

$ 0.438

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPD079N06L3GBTMA1	22,500					0.528	0.438	0.391	23h
Farnell	2	IPD079N06L3GBTMA1	0	1	Cut Tape	1.840*	1.127*	0.844*	0.641*	0.602*	23h
Verical		IPD079N06L3GBTMA1	22,500	632					0.548	0.488
Component Stockers USA		IPD079N06L3GBTMA1	621			99.990	99.990	99.990	99.990	99.990	3d
Win Source		WS-IPD079N06L3GBTMA1	12,030	32				1.501	1.242	1.242	23m

数据表和文档

下载 Infineon IPD079N06L3GBTMA1 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

Newark

库存历史记录

3 个月趋势:

+80.00%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2021-12-31

LTD Date2022-06-30

描述

由其分销商提供的 Infineon IPD079N06L3GBTMA1 的描述。

MOSFET Transistor, N Channel, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V

Epart123

Power Field-Effect Transistor, 50A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0063ohm; Available until stocks are exhausted Alternative available

Farnell

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Infineon

Mosfet, N-Ch, 60V, 50A, To-252- 3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD079N06L3GBTMA1

Newark