备用零件
Price @ 1000
$ 0.205
$ 0.252
Stock
1,033,689
4,016,453
Authorized Distributors
6
4
Mount
Surface Mount
-
Case/Package
SOT-23-6
-
Drain to Source Voltage (Vdss)
-20 V
-
Continuous Drain Current (ID)
5.8 A
5.8 A
Threshold Voltage
-1 V
-
Rds On Max
30 mΩ
-
Gate to Source Voltage (Vgs)
12 V
-
Power Dissipation
800 mW
-
Input Capacitance
1.33 nF
-
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.05Ohm;ID -5.6A;Micro6 (SOT-23);PD 2W
描述
由其分销商提供的 onsemi FDC608PZ 的描述。
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.8A, 30mΩ
MOSFET P-CH 20V 5.8A SSOT-6 / Trans MOSFET P-CH 20V 5.8A 6-Pin TSOT-23 T/R
Power MOSFET, P Channel, 20 V, 5.8 A, 0.03 ohm, SuperSOT, Surface Mount
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)5.8 A
Current Rating-5.8 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.33 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation800 mW
Rds On Max30 mΩ
Resistance30 MΩ
Rise Time8 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1 V
Turn-Off Delay Time91 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm