Infineon IRLMS6802TRPBF

Name: Infineon IRLMS6802TRPBF
Brand: Infineon
SKU: IRLMS6802TRPBF

Mosfet, Power; P-ch; Vdss -20V; Rds(on) 0.05 Ohm; Id -5.6A; MICRO6 (SOT-23); Pd 2W

$ 0.187

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRLMS6802TRPBF	2,075	1		0.573	0.391	0.266	0.134	0.134
Rochester Electronics		IRLMS6802TRPBF	292					0.183	0.152	0.136	6h
DigiKey	2	IRLMS6802PBFCT-ND	412	1	Cut Tape	0.810	0.500	0.322	0.322	0.322
RS (Formerly Allied Electronics)		IRLMS6802TRPBF	0	3K	Bulk					0.784	23h
Avnet		IRLMS6802TRPBF	0	3K							2d

数据表和文档

下载 Infineon IRLMS6802TRPBF 的数据表和制造商文档。

IHS

Datasheet2 页13 年前

Datasheet7 页23 年前

TME

RS (Formerly Allied Electronics)

Jameco

iiiC

库存历史记录

3 个月趋势:

-16.34%

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InfineonIRLMS6802TRPBF

Price @ 1000

$ 0.187

Stock

5,623,547

Authorized Distributors

Mount

Surface Mount

Case/Package

LSOP

Drain to Source Voltage (Vdss)

-20 V

Continuous Drain Current (ID)

5.6 A

Threshold Voltage

Rds On Max

50 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

2 W

Input Capacitance

1.079 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-04-09

Lifecycle StatusObsolete (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRLMS6802TRPBF 的描述。

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.05Ohm;ID -5.6A;Micro6 (SOT-23);PD 2W

RS (Formerly Allied Electronics)

-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS

Infineon SCT

Single P-Channel 20 V 0.100 Ohm 16 nC 2 W Silicon SMT Mosfet - MICRO-6

Future Electronics

MOSFET, P, LOGIC, MICRO-6; Transistor Polarity:P Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.2V; Power Dissipation Pd:2W; Transistor Case Style:µSOIC; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; On State Resistance @ Vgs = 2.5V:100mohm; On State Resistance @ Vgs = 4.5V:50mohm; P Channel Gate Charge:11nC; Package / Case:Micro6; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:45A; SMD Marking:2E; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-1.2V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.2V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon