供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-12-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRLMS2002TRPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.03Ohm;ID 6.5A;Micro6;PD 2W;VGS +/-12V;-55d
描述
由其分销商提供的 onsemi FDC637AN 的描述。
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ
Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R / MOSFET N-CH 20V 6.2A SSOT-6
1.6W(Ta) 8V 1.5V@ 250¦ÌA 16nC@ 4.5 V 1N 20V 24m¦¸@ 6.2A,4.5V 6.2A 1.125nF@10V SC-70-5,SOD-123,SOT-223,SOT-23-6 2.9mm*1.6mm*1mm
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:820Mv; Power Dissipation:1.6W; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDC637AN.
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)6.2 A
Current Rating6.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.125 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs820 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation800 mW
Rds On Max24 mΩ
Resistance24 mΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage820 mV
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm