供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-07-16
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDC2612 的描述。
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,1.1A I(D),TSOP
Trans MOSFET N-CH 200V 1.1A 6-Pin TSOT-23 T/R / MOSFET N-CH 200V 1.1A SSOT-6
N-Channel PowerTrench® MOSFET 200V 1.1A, 725mΩ
MOSFET, N CH, 200V, 1.1A, SOT-23-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.605ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOT-23; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)1.1 A
Current Rating1.1 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance725 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance234 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation800 mW
Rds On Max725 mΩ
Resistance725 MΩ
Rise Time6 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time17 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)200 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm