供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-18
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
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描述
由其分销商提供的 onsemi FDC2512 的描述。
Transistor MOSFET N Channel 150 Volt 1.4 Amp 6-Pin Supersot Tape And Reel
N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ
N-Channel 150 V 425 mOhm Surface Mount PowerTrench Mosfet - SSOT-6
ON SEMICONDUCTOR - FDC2512 - Power MOSFET, N Channel, 150 V, 1.4 A, 0.319 ohm, SuperSOT, Surface Mount
MOSFET, N, SMD, SSOT-6; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:150V; On Resistance Rds(on):425mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.4A; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:2.6V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)1.4 A
Current14 A
Current Rating1.4 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance425 mΩ
Drain to Source Voltage (Vds)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance344 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs2.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation800 mW
Rds On Max425 mΩ
Resistance425 MΩ
Rise Time3.5 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.6 V
Turn-Off Delay Time22 ns
Turn-On Delay Time6.5 ns
Voltage150 V
Voltage Rating (DC)150 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
合规
环境分类
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
合规声明