onsemi FDC8601

Name: onsemi FDC8601
Brand: onsemi
SKU: FDC8601

N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ

$ 0.678

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Distributor		SKU		Min	Pkg
Avnet	2	FDC8601	63,000	3K						0.591	4d
Verical	3	FDC8601	2,289	3			1.069	0.752	0.609	0.514
Arrow Electronics		FDC8601	2,289	1		1.410	1.069	0.752	0.609	0.609
Rochester Electronics		FDC8601	9,889					0.743	0.617	0.550	17h
DigiKey	3	FDC8601CT-ND	5,164	1	Cut Tape	2.200	1.408	0.953	0.695	0.695

数据表和文档

下载 onsemi FDC8601 的数据表和制造商文档。

element14 APAC

Datasheet0 页0 年前

Master Electronics

IHS

Upverter

onsemi

库存历史记录

3 个月趋势:

-2.37%

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-06-28

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDC8601 的描述。

N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ

onsemi

MOSFET, N CHANNEL, 100V, 0.086OHM, 2.7A, SUPERSOT-6

Farnell

Trans MOSFET N-CH 100V 2.7A 6-Pin SuperSOT T/R

Fly-Wing Technology

Fet 100V 109.0 Mohm Ssot6 Rohs Compliant: Yes

Newark

Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA

IHS

MOSFET N-CH 100V 2.7A SUPERSOT6

DigiKey

MOSFET N-CH 100V TRENCH SSOT-6

ALLICDATA ELECTRONICS

SMALL SIGNAL FIELD-EFFECT TRANSI

DigiKey Marketplace

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Fairchild Semiconductor