价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDB8441-F085 | 1,600 | 532 | 1d | ||||||||
| Rochester Electronics | FDB8441-F085 | 3,277 | 23h | |||||||||
| Flip Electronics | FDB8441-F085 | 1,600 | 7d | |||||||||
| Mouser | 512-FDB8441_F085 | 501 | 1 | Tape & Reel | ||||||||
| Win Source | WS-FDB8441_F085 | 32,500 | 30 | 23h |
备用零件
Price @ 1000
$ 1.26
$ 2.009
Stock
181,210
123,169
Authorized Distributors
4
5
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
28 A
28 A
Threshold Voltage
-
2.8 V
Rds On Max
2.5 mΩ
2.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
15 nF
15 nF
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-09
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2023-09-30
LTD Date2024-03-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
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描述
由其分销商提供的 onsemi FDB8441-F085 的描述。
Trans MOSFET N-CH Si 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
300W(Tc) 20V 4V@ 250¦ÌA 280nC@ 10 V 1N 40V 2.5m¦¸@ 80A,10V 28A,80A 15nF@25V D2PAK,TO-263
N-Channel PowerTrench® MOSFET, 40V, 80A, 2.5mΩ
Power Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time17.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation300 W
Rds On Max2.5 mΩ
Rise Time24 ns
Turn-Off Delay Time75 ns
Turn-On Delay Time23 ns
Dimensions
Height5.08 mm