onsemi FDB8441

Name: onsemi FDB8441
Brand: onsemi
SKU: FDB8441

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

$ 2.009

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Avnet	FDB8441	800	414							4h
DigiKey	FDB8441CT-ND	785	1	Cut Tape	4.300	2.840	2.009	2.009	2.009
Flip Electronics	FDB8441	2,400								6d
element14 APAC	FDB8441	0	1		1.683*	1.683*	1.627*	1.556*	1.501*	16h
Farnell	FDB8441	0	1		1.689*	1.689*	1.634*	1.566*	1.512*	1d

数据表和文档

下载 onsemi FDB8441 的数据表和制造商文档。

IHS

Datasheet7 页20 年前

element14 APAC

onsemi

element14

Farnell

库存历史记录

3 个月趋势:

-33.44%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-09-20

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FDB8441 的描述。

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ

onsemi

N-Channel 40 V 120 A 2.5 mohm Surface Mount PowerTrench® Mosfet - TO-263AB

Future Electronics

Power Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):0.0019ohm; Rds(on) Test Voltage, Vgs:2.8V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

Newark

MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-263; Capacitance Ciss Typ:15000pF; Current Id Max:28A; Fall Time tf:17.9ns; Junction Temperature Tj Max:175°C; No. of Transistors:1; Package / Case:D2-PAK; Pin Format:G,D,S; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:52ns; Rise Time:24ns; SMD Marking:FDB8441; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC