供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-10-10
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
InfineonIRF1503STRLPBF
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRF1503SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 75A;D2Pak;PD 200W;VGS +/-20
STMicroelectronicsSTB120N4LF6
N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
描述
由其分销商提供的 Infineon IRF2804STRLPBF 的描述。
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 75A;D2Pak;PD 200W;VGS +/-20
Single N-Channel 40V 2 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 40 V, 75 A, 0.002 ohm, TO-263 (D2PAK), Surface Mount
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 40V 280A 3-Pin (2+Tab) D2PAK T/R
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:20V; Power Dissipation Pd:330W
MOSFET, N-CH, 40V, 75A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.45 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.3 mΩ
Package Quantity800
Power Dissipation300 W
Rds On Max2 mΩ
Resistance2 MΩ
Rise Time120 ns
Schedule B8541290080
Threshold Voltage20 V
Turn-Off Delay Time130 ns
Turn-On Delay Time13 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm