供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-05-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
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描述
由其分销商提供的 onsemi FDB15N50 的描述。
N-Channel Power MOSFET, UniFETTM, 500 V, 15 A, 380 mΩ, D2PAK
N-Channel 500 V 0.38 Ohm 41 nC Surface Mount SMPS Power Mosfet -D2PAK-3
Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET,N CH,500V,15A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:500V; On Resistance Rds(on):330mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Power Dissipation Pd:300W; Voltage Vgs Max:30V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)15 A
Current Rating15 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.85 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3.4 V
Number of Channels1
Number of Elements1
Power Dissipation300 W
Rds On Max380 mΩ
Resistance380 mΩ
Rise Time5.4 ns
Schedule B8541290080
Threshold Voltage3.4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)500 V
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm