供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
相关零件
STMicroelectronicsSTB14NM50N
N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package
VishaySIHB6N65E-GE3
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
描述
由其分销商提供的 Infineon SPB16N50C3 的描述。
Mosfet Transistor, N Channel, 16 A, 560 V, 0.25 Ohm, 10 V, 3 V Rohs Compliant: Yes
MOSFET N-CH 560V 16A TO263-3 / N-Channel 560 V 16A (Tc) 160W (Tc) Surface Mount PG-TO263-3-2
Trans MOSFET N-CH 500V 16A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 560V, 16A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 560V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)500 V
Gate to Source Voltage (Vgs)20 V
Max Dual Supply Voltage500 V
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance280 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation160 W
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time50 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)560 V