Infineon IPB60R199CPATMA1

Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) D2PAK T/R

139W 20V 2.5V 32nC@ 10V 1N 650V 199m¦¸@ 10V 16A 1.52nF@ 100V TO-263 , 10mm*9.25mm*4.4mm

MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP

CoolMOS 600V 16A 200mOhm TO263 RoHSconf

IPB60R199CP Infineon Technologies

CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:650V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:139W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-263; Power Dissipation Pd:139W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V