由其分销商提供的 STMicroelectronics STB14NM50N 的描述。
N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package
Power MOSFET, N Channel, 500 V, 12 A, 0.28 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R
N-Channel 550 V 0.32 Ohm Surface Mount MDMesh II Power MosFet - D2PAK
90W 25V 4V@ 100uA 27nC@ 10 V 2N 500V 320m¦¸@ 6A,10V 12A 816pF@50V D2PAK 4.83mm
Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 500V, 12A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Mosfet, N Ch, 500V, 12A, To-263; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:12A; Tensión Drenaje-Fuente Vds:500V; Resistencia De Activación Rds(On):0.28Ohm; Tensión Vgs De Medición Rds(On):10V; Núm. De Contactos:3 |Stmicroelectronics STB14NM50N