onsemi FDB14N30TM

Name: onsemi FDB14N30TM
Brand: onsemi
SKU: FDB14N30TM

N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, D2PAK

EOL

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Distributor		SKU		Min	Pkg
element14 APAC	2	FDB14N30TM	0	1	Cut Tape	1.794*	1.418*	1.206*	0.877*	0.838*	4h
Farnell	2	FDB14N30TM	0	1	Cut Tape	1.883*	1.547*	1.208*	0.965*	0.926*	14h
Weyland Electronics Group Pte. Ltd.		FDB14N30TM	1,888	1	Tape & Reel	10.517	10.517	10.517	10.517	10.517	1d
Win Source		WS-FDB14N30TM	3,200	2			26.469	22.940	22.940	22.940	15h
Classic Components		FDB14N30TM	816					26.472	26.472	26.472	1d

数据表和文档

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Upverter

Technical Drawing1 页5 年前

Datasheet0 页0 年前

Farnell

IHS

onsemi

element14

CAD 模型

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EE Concierge	符号封装

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-03-09

Lifecycle StatusEOL (Last Updated: 5 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi FDB14N30TM 的描述。

N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, D2PAK

onsemi

N-Channel 300 V 0.29 Ohm Surface Mount UniFET Mosfet - D2PAK-3

Future Electronics

Trans MOSFET N-CH 300V 14A 3-Pin(2+Tab) D2PAK T/R

Avnet

Power Field-Effect Transistor, 14A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

IHS

MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:300V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Termination Type:SMD; Voltage Vds Typ:300V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor