价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FDB44N25TM | 24,000 | 800 | Tape & Reel | ||||||||
| Newark | FDB44N25TM | 1,050 | 1 | Cut Tape | ||||||||
| Verical | FDB44N25TM | 1,600 | 800 | |||||||||
| Arrow Electronics | FDB44N25TM | 1,600 | 800 | |||||||||
| Master Electronics | FDB44N25TM | 800 | 25 |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-09-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
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描述
由其分销商提供的 onsemi FDB44N25TM 的描述。
N-Channel Power MOSFET, UniFETTM, 250V, 44A, 69mΩ, D2PAK
N-Channel 250 V 0.069 Ohm Surface Mount UniFET Mosfet - D2PAK-3
Power Field-Effect Transistor, 44A I(D), 250V, 0.069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-2
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)44 A
Current Rating44 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance69 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.87 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation307 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation307 W
Rds On Max69 mΩ
Resistance69 mΩ
Rise Time400 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time85 ns
Turn-On Delay Time55 ns
Voltage Rating (DC)250 V
Dimensions
Height4.83 mm
Length10.67 mm
Width11.33 mm