供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2009-12-04
LTD Date2010-06-04
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
VishayIRF9640STRRPBF
MOSFET P-CH 200V 11A D2PAK / P-Channel 200 V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
描述
由其分销商提供的 onsemi FQB9P25TM 的描述。
P-Channel MOSFET, QFET®, -250 V, -9.4 A, 620 mΩ
Power Field-Effect Transistor, 9.4A I(D), 250V, 0.62ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-250V; On Resistance Rds(On):0.48Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power Rohs Compliant: Yes |Onsemi FQB9P25TM
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited forhigh efficiency switching DC/DC converters.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)9.4 A
Current Rating-9.4 A
Drain to Source Breakdown Voltage-250 V
Drain to Source Resistance620 mΩ
Drain to Source Voltage (Vdss)-250 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.18 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.13 W
Rds On Max620 mΩ
Rise Time150 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-250 V
Dimensions
Height5.08 mm