供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-18
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
InfineonIRF640NSTRRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
STMicroelectronicsSTB55NF06T4
N-Channel 60V - 0.017Ohm - 50A - D2PAK StripFET(TM) II POWER MOSFET
InfineonIRF9Z34NSTRRPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;D2Pak;PD 68W;VGS +/-20V;-55d
描述
由其分销商提供的 STMicroelectronics STB18NF25 的描述。
Trans MOSFET N-CH 250V 17A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 250V 17A D2PAK
Automotive-grade N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET II Power MOSFET in D2PAK package
N-Channel 250 V 165 mOhm 17 A Surface Mount Power MOSFET - D2PAK
Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time8.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max165 mΩ
Resistance165 MΩ
Rise Time17.2 ns
Schedule B8541290080
Turn-Off Delay Time21 ns
Turn-On Delay Time8.8 ns