供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-09
Lifecycle StatusEOL (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
相关零件
STMicroelectronicsSTH140N8F7-2
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
InfineonIPB90N06S404ATMA2
MOSFET N-CH 60V 90A D2PAK / N-Channel 60 V 90A (Tc) 150W (Tc) Surface Mount PG-TO263-3
InfineonIPB80N06S2L05ATMA1
Mosfet Transistor, N Channel, 80 A, 55 V, 0.0041 Ohm, 4.5 V, 1.6 V Rohs Compliant: Yes
VishaySUM90N06-5M5P-E3
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiBBS3002-TL-1E
MOSFET P-CH 60V 100A D2PAK / P-Channel 60 V 100A (Ta) 90W (Tc) Surface Mount D2PAK (TO-263)
描述
由其分销商提供的 onsemi FDB045AN08A0-F085 的描述。
Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
N-Channel PowerTrench® MOSFET 75 V, 80 A, 3.9 mΩ
Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Chip Resistor - Surface Mount 2.26kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 2.26K OHM 1% 1/10W 0402
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.6 nF
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation310 W
Rds On Max4.5 mΩ
Rise Time88 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time18 ns