价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | BBS3002-TL-1E | 0 | 5 | Cut Tape | 3h | |||||||
| Microchip USA | BBS3002-TL-1E | 268 | 150 | Tray | 1d | |||||||
| Win Source | WS-BBS3002-TL-1E | 20 | 10 | 18h | ||||||||
| Worldway Electronics | BBS3002-TL-1E | 21,625 | 7 | Tape & Reel | 1d | |||||||
| Aztech | BBS3002-TL-1E | 8,994 | 1d |
供应链
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-03
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi BBS3002-TL-1E 的描述。
MOSFET P-CH 60V 100A D2PAK / P-Channel 60 V 100A (Ta) 90W (Tc) Surface Mount D2PAK (TO-263)
90W(Tc) 20V 2.6V 280nC@ 10 V 1P 60V 5.8m¦¸@ 50A,10V 100A 13.2nF@20V D2PAK 5.08mm
Power MOSFET, P-Channel, -60V, -100A, 5.8mΩ
Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, P-CH, -60V, -100A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2.6V RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight2.084002 g
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)-60 V
Fall Time820 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation90 W
Rds On Max5.8 mΩ
Rise Time1 µs
Schedule B8541290080
Turn-Off Delay Time800 ns
Turn-On Delay Time95 ns
Dimensions
Height5.08 mm