价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Component Stockers USA | IPB80N06S2L05ATMA1 | 646 | >1wk | |||||||||
| Win Source | WS-IPB80N06S2L05ATMA1 | 1,000 | 9 | 20h | ||||||||
| Worldway Electronics | IPB80N06S2L05ATMA1 | 15,020 | 7 | Tape & Reel | 19h | |||||||
| Aztech | IPB80N06S2L05ATMA1 | 4,557 | 14h | |||||||||
| Fly-Wing Technology | IPB80N06S2L05ATMA1 | 995 | 18h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-03-13
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-10-01
LTD Date2017-04-01
相关零件
VishaySUM90N04-3M3P-E3
Single N-Channel 40 V 0.0033 O 87 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
InfineonIPB80N04S4L04ATMA1
40V, N-Ch, 4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB80N04S403ATMA1
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
VishaySUM90N06-5M5P-E3
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiHUF75345S3S
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 75A D2PAK
描述
由其分销商提供的 Infineon IPB80N06S2L05ATMA1 的描述。
Mosfet Transistor, N Channel, 80 A, 55 V, 0.0041 Ohm, 4.5 V, 1.6 V Rohs Compliant: Yes
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
55V, N-Ch, 5 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 80A I(D), 55V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 55V, 80A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0041ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.6V; Po
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance5.7 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time90 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.7 nF
Max Dual Supply Voltage55 V
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation300 W
Rds On Max4.5 mΩ
Rise Time93 ns
Turn-Off Delay Time67 ns
Turn-On Delay Time19 ns