价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FCP9N60N | 745 | 216 | |||||||||
| Rochester Electronics | FCP9N60N | 33,508 | 5h | |||||||||
| Microchip USA | FCP9N60N | 302 | 150 | Bulk | 21h | |||||||
| Win Source | WS-FCP9N60N | 7,900 | 30 | 6h | ||||||||
| Worldway Electronics | FCP9N60N | 28,561 | 7 | Tube | 5h |
备用零件
Price @ 1000
$ 1.395
$ 1.22
Stock
288,758
310,895
Authorized Distributors
2
6
Mount
Through Hole
-
Case/Package
TO-220
TO-220-3
Drain to Source Voltage (Vdss)
600 V
650 V
Continuous Drain Current (ID)
9 A
10 A
Threshold Voltage
2 V
-
Rds On Max
385 mΩ
-
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
83.3 W
83 W
Input Capacitance
1.24 nF
-
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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STMicroelectronicsSTP10NK60Z
N-channel 600 V, 0.65 Ohm typ., 10 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
描述
由其分销商提供的 onsemi FCP9N60N 的描述。
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220AB Rail
N-CHANNEL SUPREMOS MOSFET Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 9A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:27A
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance385 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10.2 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.24 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83.3 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation83.3 W
Rds On Max385 mΩ
Rise Time8.7 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time36.9 ns
Turn-On Delay Time12.7 ns
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm