onsemi FCP11N60N

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220

94W(Tc) 30V 4V@ 250¦ÌA 35.6nC@ 10V 1N 600V 299m¦¸@ 5.4A,10V 10.8A 1.505nF@100V TO-220-3 9.4mm

FCH47N60 Series 600 V 0.38 Ohms Flange Mount N-Channel MOSFET - TO-220

Power Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET,N CH,600V,10.8A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.