价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | CPH3457-TL-W | 422,350 | 18h | |||||||||
| Farnell | CPH3457-TL-W. | 0 | 5 | Cut Tape | 18h | |||||||
| Microchip USA | CPH3457-TL-W | 262 | 3500 | Tray | 13h | |||||||
| Component Stockers USA | CPH3457-TL-W | 490,480 | 2d | |||||||||
| Win Source | WS-CPH3457-TL-W | 11,877 | 140 | 20h |
备用零件
Price @ 1000
$ 0.094
$ 0.119
Stock
1,546,158
368,215
Authorized Distributors
2
3
Mount
Surface Mount
-
Case/Package
TO-236-3
SC
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
3 A
3 A
Threshold Voltage
-
-
Rds On Max
95 mΩ
95 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1 W
1 W
Input Capacitance
265 pF
265 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-28
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
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描述
由其分销商提供的 onsemi CPH3457-TL-W 的描述。
N-Channel 30 V 95 mOhm 3.5 nC Surface Mount Mosfet - SOT-23
N-Channel Power MOSFET 30V, 3A, 95mΩ
Small Signal Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH Si 30V 3A 3-Pin CPH T/R
MOSFET, N-CH, 30V, 3A, 150DEG C, 1W;
SMALL SIGNAL FIELD-EFFECT TRANSI
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-236-3
Contact PlatingTin Bismuth
MountSurface Mount
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance73 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time36 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance265 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1 W
Rds On Max95 mΩ
Rise Time10 ns
Turn-Off Delay Time137 ns
Turn-On Delay Time5.1 ns
Dimensions
Height950 µm