价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 2N7000-D26Z | 4,000 | 2K | 8h | ||||||||
| Newark | 2N7000-D26Z | 1,831 | 1 | Cut Tape | ||||||||
| Verical | 2N7000_D26Z | 4,000 | 2K | |||||||||
| Arrow Electronics | 2N7000-D26Z | 4,955 | 1 | |||||||||
| Future Electronics | 2N7000-D26Z | 42,000 | 2K | Tape & Reel |
备用零件
Price @ 1000
$ 0.161
$ 0.124
$ 0.124
Stock
1,077,855
2,075,168
2,075,168
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92
TO-92
TO-92
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
200 mA
200 mA
200 mA
Threshold Voltage
2.1 V
2.1 V
2.1 V
Rds On Max
2 Ω
5 Ω
5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
400 mW
350 mW
350 mW
Input Capacitance
50 pF
40 pF
40 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi 2N7000-D26Z 的描述。
2N7000 Series 60 V 200 mA N-Ch. Enhancement Mode Field Effect Transistor-TO-92-3
N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
ON SEMICONDUCTOR - 2N7000-D26Z - MOSFET, N CH, 60V, 0.2A, TO-92
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOSFET, N CH, 60V, 0.2A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:400mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:200mA; Package / Case:TO-92; Power Dissipation Pd:400mW; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation400 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation400 mW
Rds On Max2 Ω
Resistance5 Ω
Schedule B8541210080
TerminationThrough Hole
Threshold Voltage2.1 V
Turn-Off Delay Time10 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height8.77 mm
Length6.35 mm
Width6.35 mm