onsemi 2N7000BU

N-Channel 60 V 5 Ohm Through Hole Advanced Small Signal Mosfet - TO-92

Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk

400mW(Ta) 20V 3V@1mA 1N 60V 5¦¸@ 500mA,10V 200mA 50pF@25V TO-92-3 5.2mm*4.19mm*5.33mm

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

MOSFET, N-CH, 60V, 0.2A, TO-226AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.9V; P

These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.