onsemi 2N7000

Name: onsemi 2N7000
Brand: onsemi
SKU: 2N7000

Transistor MOSFET N Channel 60 Volt 0.2 Amp 3 Pin TO-92 Bulk

$ 0.124

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	2N7000	60,558	1		0.086	0.080	0.079	0.079	0.079	22h
Newark	2	2N7000.	60,558	1		0.679	0.432	0.293	0.233	0.233
Verical	6	2N7000	92,709	82				0.079	0.075	0.073
Arrow Electronics	2	2N7000	92,709	1		0.350	0.238	0.079	0.075	0.073
Future Electronics	3	2N7000	91,369	200	Bag				0.113	0.106

数据表和文档

下载 onsemi 2N7000 的数据表和制造商文档。

IHS

Datasheet12 页2 年前

Datasheet0 页0 年前

Datasheet3 页25 年前

Upverter

Electro Sonic

Newark

Future Electronics

库存历史记录

3 个月趋势:

+82.53%

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onsemi2N7000

onsemi2N7000-D26Z

Price @ 1000

$ 0.124

$ 0.161

Stock

2,038,447

1,046,235

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

200 mA

Threshold Voltage

2.1 V

Rds On Max

5 Ω

2 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

350 mW

400 mW

Input Capacitance

40 pF

50 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi 2N7000 的描述。

Transistor MOSFET N Channel 60 Volt 0.2 Amp 3 Pin TO-92 Bulk

Jameco

ON SEMICONDUCTOR - 2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

Fly-Wing Technology

MOSFET;N-Ch;VDSS 60VDC;RDS(ON) 5 Ohms;ID 200mA;TO-92 (TO-226);PD 350mW;-55degc

RS (Formerly Allied Electronics)

N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω

onsemi

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

ComSIT Distribution GmbH

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

Avnet

Mosfet, N-Ch, 60V, 0.2A, To-226Aa; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:200Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Onsemi 2N7000.

Newark

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Fairchild Semiconductor