Infineon IRLZ34NSPBF

Name: Infineon IRLZ34NSPBF
Brand: Infineon
SKU: IRLZ34NSPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.035 Ohm; Id 30A; D2PAK; Pd 68W; Vgs +/-16V; -55D

$ 1.25

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLZ34NSPBF	0	850	Bulk				1.250	1.250	11h
Microchip USA	IRLZ34NSPBF	321	600	Tube				4.160	4.160	16h
Win Source	WS-IRLZ34NSPBF	20	65				0.812	0.541	0.541	23h
Worldway Electronics	IRLZ34NSPBF	9,185	7	Tube		1.325	1.300	1.250	1.225	22h
Aztech	IRLZ34NSPBF	469			4.970	4.970	4.970	4.970	4.970	17h

数据表和文档

下载 Infineon IRLZ34NSPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet12 页21 年前

Newark

RS (Formerly Allied Electronics)

DigiKey

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InfineonIRLZ34NSPBF

InfineonIRLZ34NSTRLPBF

Price @ 1000

$ 1.25

$ 0.578

Stock

80,337

1,005,798

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

30 A

Threshold Voltage

2 V

Rds On Max

35 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

3.8 W

Input Capacitance

880 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRLZ34NSPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;D2Pak;PD 68W;VGS +/-16V;-55d

RS (Formerly Allied Electronics)

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK

Avnet

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:30A; On Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.8W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:110mJ; Capacitance Ciss Typ:880pF; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:3.8W; Power Dissipation Pd:3.8W; Pulse Current Idm:110A; Reverse Recovery Time trr Typ:76ns; SMD Marking:Z34NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

element14 APAC