Infineon IRLZ34NSTRLPBF

Name: Infineon IRLZ34NSTRLPBF
Brand: Infineon
SKU: IRLZ34NSTRLPBF

Power MOSFET, N Channel, 55 V, 30 A, 0.035 ohm, TO-263 (D2PAK), Surface Mount

$ 0.578

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Distributor		SKU		Min	Pkg
Avnet	2	64AH3720	11,529	1		1.840	1.270	0.887	0.654	0.654	22h
Newark		IRLZ34NSTRLPBF	23,584	1	Cut Tape	1.840	1.270	0.887	0.654	0.594
Future Electronics	2	IRLZ34NSTRLPBF	108,800	800	Tape & Reel				0.550	0.525
Rutronik		TMOSP12700	7,200	800					0.430	0.344	3h
Rochester Electronics		IRLZ34NSTRLPBF	399					0.685	0.569	0.507	19h

数据表和文档

下载 Infineon IRLZ34NSTRLPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet12 页21 年前

element14 APAC

DigiKey

Jameco

iiiC

库存历史记录

3 个月趋势:

-9.49%

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InfineonIRLZ34NSTRLPBF

InfineonIRLZ34NSPBF

Price @ 1000

$ 0.578

$ 1.25

Stock

1,001,958

80,180

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

30 A

Threshold Voltage

2 V

Rds On Max

35 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

3.8 W

Input Capacitance

880 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-01-01

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IRLZ34NSTRLPBF 的描述。

Power MOSFET, N Channel, 55 V, 30 A, 0.035 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R

Verical

IRLZ34NSTRLPBF,MOSFET, 55V, 30 A, 35 MOHM, 16.7 NC QG, LOGIC

Jameco

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:30A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:68W ;RoHS Compliant: Yes

Newark

MOSFET, N, 55V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:68W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:21A; Cont Current Id @ 25°C:30A; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:110A; Rth:2.2; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68

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