IRLZ34SPBF by Vishay

Vishay IRLZ34SPBF

IRLZ34S Series N-Channel 60 V 50 mOhm 3.7 W Power Mosfet - D2PAK (TO-263)

Obsolete

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	Distributor		SKU		Min	Pkg
	Component Stockers USA		IRLZ34SPBF	2,450			1.990	1.660	1.320	0.950	0.950	>1wk
	Win Source		WS-IRLZ34SPBF	10,400	40				1.313	1.067	1.067	12h
	Anlinkda		IRLZ34SPBF	23,899			1.495	1.339	1.143	1.123	1.082	1d
	SHENGYU ELECTRONICS		IRLZ34SPBF	10,095	1		0.887	0.869	0.840	0.820	0.780	1d
	Lixinc		IRLZ34SPBF	5,046			2.270	2.053	2.053	2.053	2.053	>1wk

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数据表和文档

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IHS

Datasheet11 页5 年前

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Future Electronics

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1994-05-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-11-04

LTD Date2025-05-04

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描述

由其分销商提供的 Vishay IRLZ34SPBF 的描述。

IRLZ34S Series N-Channel 60 V 50 mOhm 3.7 W Power Mosfet - D2PAK (TO-263)

Future Electronics

Trans MOSFET N-CH Si 60V 30A 3-Pin(2+Tab) D2PAK

LOGIC MOSFET N-CHANNEL 60V

MOSFET N-CH 60V 30A D2PAK

Fly-Wing Technology

Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

图片

Future Electronics

制造商别名

Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：

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技术规格

Physical

Case/PackageTO-263-3

MountSurface Mount

Number of Pins3

Number of Terminals2

Technical

Continuous Drain Current (ID)30 A

Drain to Source Resistance50 mΩ

Drain to Source Voltage (Vdss)60 V

Fall Time56 ns

Gate to Source Voltage (Vgs)10 V

Input Capacitance1.6 nF

Max Operating Temperature175 °C

Max Power Dissipation3.7 W

Min Breakdown Voltage60 V

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

PackagingTape & Reel (TR)

Rds On Max50 mΩ

Resistance50 MΩ

Rise Time170 ns

Turn-Off Delay Time30 ns

Turn-On Delay Time14 ns

数据表和文档

下载 Vishay IRLZ34SPBF 的数据表和制造商文档。

IHS

Datasheet11 页5 年前

_legacy Avnet

Future Electronics

合规

环境分类

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCYes

RoHSCompliant

合规声明

Rohs Statement5 页14 年前