Infineon IRLS3036PBF

Name: Infineon IRLS3036PBF
Brand: Infineon
SKU: IRLS3036PBF

Transistor: N-MOSFET; unipolar; HEXFET; 60V; 270A; 380W; D2PAK

$ 3.06

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	IRLS3036PBF	48					1.880	1.680	1.580	7h
RS (Formerly Allied Electronics)	IRLS3036PBF	0	250	Bulk				4.440	4.440	1d
Farnell	IRLS3036PBF	0	1		3.571*	3.571*	2.535*	2.372*	2.372*	1d
Win Source	WS-IRLS3036PBF	1,800	12				3.816	3.421	3.421	8h
Worldway Electronics	IRLS3036PBF	14,050	7	Tube		0.591	0.573	0.543	0.543	7h

数据表和文档

下载 Infineon IRLS3036PBF 的数据表和制造商文档。

IHS

Datasheet11 页17 年前

Datasheet10 页17 年前

iiiC

Farnell

库存历史记录

3 个月趋势:

Restocked

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLS3036PBF 的描述。

Transistor: N-MOSFET; unipolar; HEXFET; 60V; 270A; 380W; D2PAK

Fly-Wing Technology

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Benefits: RoHS Compliant; Logic Level | Target Applications: Battery Operated Drive

Infineon

Trans MOSFET N-CH 60V 270A 3-Pin(2+Tab) D2PAK Tube

Verical

Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH 60V 195A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:165A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Id Max:270A; Package / Case:D2-PAK; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

element14 APAC