供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-07
Lifecycle StatusProduction (Last Updated: 2 months ago)
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描述
由其分销商提供的 STMicroelectronics STH260N6F6-2 的描述。
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
STH260N6F6-2 N-channel MOSFET Transistor, 180 A, 60 V, 3-Pin H2PAK-2
300W(Tc) 20V 4V@ 250µA 183nC@ 10 V 1individualNChannel 60V 2.4mΩ@ 60A,10V 180A 11.8nF@25V H2PAK-2 SMD mount 10.4mm(Length)*9.17mm(width)
MOSFET, N CH, 75V, 180A, H2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Powe
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time62.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.8 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation300 W
Rds On Max2 mΩ
Resistance2 MΩ
Rise Time165 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time144.4 ns
Turn-On Delay Time31.4 ns
Dimensions
Height4.8 mm
Length15.8 mm
Width10.4 mm