备用零件
Price @ 1000
$ 1.601
Stock
64,442
611,154
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vds)
60 V
60 V
Continuous Drain Current (ID)
195 A
195 A
Threshold Voltage
3.7 V
3.7 V
Rds On Max
2 mΩ
2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
13.703 nF
13.703 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 9 months ago)
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描述
由其分销商提供的 Infineon IRFS7530PBF 的描述。
N Channel 60 V 2 mO 375 W Surface Mount HexFet Power MosFet - D2PAK
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 295A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vds)60 V
Fall Time104 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.703 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2 mΩ
Rise Time141 ns
Threshold Voltage3.7 V
Turn-Off Delay Time172 ns
Turn-On Delay Time52 ns
Dimensions
Height5.084 mm