Infineon IRLR2905ZTRPBF

Name: Infineon IRLR2905ZTRPBF
Brand: Infineon
SKU: IRLR2905ZTRPBF

In a Tube of 75, N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK Infineon IRLR2905ZPBF

$ 0.464

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark	2	IRLR2905ZTRPBF	2,751	5	Cut Tape		0.999	0.816	0.745	0.745
Arrow Electronics	3	IRLR2905ZTRPBF	3,650	1		0.374	0.374	0.374	0.374	0.374
Rutronik		TMOSP12621	2,000	2K						0.319	22h
Rochester Electronics		IRLR2905ZTRPBF	2,820					0.449	0.373	0.332	15h
DigiKey	3	IRLR2905ZTRPBFCT-ND	8,861	1	Cut Tape	1.530	0.967	0.642	0.457	0.457

数据表和文档

下载 Infineon IRLR2905ZTRPBF 的数据表和制造商文档。

Newark

Datasheet12 页15 年前

Datasheet11 页16 年前

IHS

iiiC

库存历史记录

3 个月趋势:

+67.02%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRLR2905ZTRPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装	3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRLR2905ZTRPBF

InfineonAUIRLR2905ZTRL

Price @ 1000

$ 0.464

$ 1.305

Stock

1,143,457

250,512

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

Rds On Max

13.5 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

110 W

Input Capacitance

1.57 nF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-02

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLR2905ZTRPBF 的描述。

In a Tube of 75, N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK Infineon IRLR2905ZPBF

Fly-Wing Technology

Trans MOSFET N-CH Si 55V 60A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 55V 42A DPAK

Win Source

Single N-Channel 55 V 22.5 mOhm 35 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: AC-DC

Infineon

N CHANNEL MOSFET, 55V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current, Id:42mA; Drain Source Voltage, Vds:55V; On Resistance, Rds(on):0.135ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 13.5 / Gate-Source Voltage V = 16 / Fall Time ns = 33 / Rise Time ns = 130 / Turn-OFF Delay Time ns = 24 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

Distrelec