Infineon IRFR2905ZTRPBF

Name: Infineon IRFR2905ZTRPBF
Brand: Infineon
SKU: IRFR2905ZTRPBF

Single N-Channel 55 V 14.5 mOhm 29 nC HEXFET® Power Mosfet - TO-252AA

$ 0.45

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		IRFR2905ZTRPBF	452	1	Cut Tape	1.870	1.230	0.866	0.660	0.660
Arrow Electronics	2	IRFR2905ZTRPBF	2,000	1		0.477	0.477	0.477	0.477	0.477
DigiKey	3	IRFR2905ZPBFCT-ND	4,596	1	Cut Tape	1.430	0.900	0.595	0.422	0.422
RS (Formerly Allied Electronics)		IRFR2905ZTRPBF	0	2K	Bulk					1.940	6h
Future Electronics	2	IRFR2905ZTRPBF	0	2K	Tape & Reel					0.400

数据表和文档

下载 Infineon IRFR2905ZTRPBF 的数据表和制造商文档。

Newark

Datasheet12 页15 年前

Datasheet11 页15 年前

Datasheet12 页21 年前

TME

iiiC

DigiKey

库存历史记录

3 个月趋势:

-13.56%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRFR2905ZTRPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRFR2905ZTRPBF

InfineonAUIRFR2905ZTRL

Price @ 1000

$ 0.45

$ 1.19

Stock

850,637

401,602

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

TO-252-3

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

Rds On Max

14.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

110 W

Input Capacitance

1.38 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-11-24

Lifecycle StatusEOL (Last Updated: 2 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon IRFR2905ZTRPBF 的描述。

Single N-Channel 55 V 14.5 mOhm 29 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 55 V, 42 A, 0.0145 ohm, TO-252AA, Surface Mount

Avnet

Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

Infineon

MOSFET, N-CH, 55V, 42A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0111ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 59 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 14.5 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

Distrelec