Infineon IRLR120NTRPBF

Name: Infineon IRLR120NTRPBF
Brand: Infineon
SKU: IRLR120NTRPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.185 Ohm; Id 10A; D-pak (TO-252AA); Pd 48W

$ 0.417

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet		IRLR120NTRPBF	42,000	2K						0.208	2d
Newark		IRLR120NTRPBF	3,702	1	Cut Tape	1.240	0.811	0.645	0.487	0.487
Arrow Electronics	3	IRLR120NTRPBF	1,380	1		0.224	0.224	0.224	0.224	0.224
Future Electronics	2	IRLR120NTRPBF	160,000	2K	Tape & Reel					0.310
Rutronik		TMOSP12610	10,000	2K						0.215	7h

数据表和文档

下载 Infineon IRLR120NTRPBF 的数据表和制造商文档。

Newark

Datasheet12 页11 年前

Datasheet11 页21 年前

Datasheet11 页28 年前

Datasheet10 页28 年前

element14 APAC

RS (Formerly Allied Electronics)

Jameco

iiiC

库存历史记录

3 个月趋势:

+21.92%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRLR120NTRPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRLR120NTRPBF

InfineonAUIRLR120NTRL

Price @ 1000

$ 0.417

$ 0.921

Stock

2,251,601

234,872

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

TO-252-3

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

10 A

Threshold Voltage

2 V

Rds On Max

185 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

39 W

48 W

Input Capacitance

440 pF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2014-07-21

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLR120NTRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-252AA, Surface Mount

Avnet

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

N CHANNEL MOSFET, 100V, 10A, D-PAK; TRAN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;

element14 APAC

IRLR120NTRPBF,MOSFET, 100V, 11 A, 185 MOHM, 13.3 NC QG, LOGI

Jameco

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:11A; Package/Case:D-PAK; Power Dissipation, Pd:39W; Continuous Drain Current - 100 Deg C:6.9A; Drain Source On Resistance @ 10V:185mohm ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 16 / Fall Time ns = 22 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48

Distrelec