Infineon IRL3713STRLPBF

Name: Infineon IRL3713STRLPBF
Brand: Infineon
SKU: IRL3713STRLPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 2.6MILLIOHMS; Id 260A; D2PAK; Pd 330W; Vgs +/-2

$ 7.61

Obsolete

制造商页面数据表

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRL3713STRLPBF	0	10	Bulk		8.450	7.610	7.610	7.610	13h
Farnell	IRL3713STRLPBF	0	1		3.149*	2.372*	1.909*	1.868*	1.868*	20h
Microchip USA	IRL3713STRLPBF	1,618	600					2.952	2.952	14h
Weyland Electronics Group Pte. Ltd.	IRL3713STRLPBF	693	1	Tape & Reel	22.537	22.537	22.537	22.537	22.537	21h
Win Source	WS-IRL3713STRLPBF	1,466	23				2.003	1.680	1.680	21h

数据表和文档

下载 Infineon IRL3713STRLPBF 的数据表和制造商文档。

Newark

Datasheet12 页12 年前

Datasheet12 页22 年前

IHS

Farnell

RS (Formerly Allied Electronics)

Jameco

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InfineonIRL3713STRLPBF

InfineonIRL3713SPBF

Price @ 1000

$ 7.61

$ 2.99

Stock

70,968

57,772

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

2.5 V

Rds On Max

3 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

Input Capacitance

5.89 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-05-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-10-31

LTD Date2021-04-30

描述

由其分销商提供的 Infineon IRL3713STRLPBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS +/-2

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 260A D2PAK

Win Source

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

Infineon

IRL3713STRLPBF,MOSFET, 30V, 20 0A, 3 MOHM, 75 NC QG, LOGIC L

Jameco

Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:200A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes

Newark

MOSFET, N, 30V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:170A; Cont Current Id @ 25°C:200A; Current Id Max:260A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:330W; Pulse Current Idm:1040A; Rth:0.45; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

element14 APAC