Infineon IRL7833SPBF

Name: Infineon IRL7833SPBF
Brand: Infineon
SKU: IRL7833SPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 3.1MILLIOHMS; Id 150A; D2PAK; Pd 140W; Vgs +/-2

$ 2.51

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRL7833SPBF	0	2	Bulk		2.650	2.510	2.510	2.510	20h
Farnell	IRL7833SPBF	0	1		2.641*	2.641*	2.641*	2.641*	2.641*	4h
Win Source	WS-IRL7833SPBF	2,260	1		52.388	34.925	34.925	34.925	34.925	5h
Worldway Electronics	IRL7833SPBF	5,488	7	Tube		0.449	0.435	0.412	0.412	4h
Chipsmall Limited	IRL7833SPBF	50,000	1		1.200	0.800	0.480	0.400	0.400	3h

数据表和文档

下载 Infineon IRL7833SPBF 的数据表和制造商文档。

IHS

Datasheet14 页21 年前

Datasheet13 页21 年前

element14 APAC

RS (Formerly Allied Electronics)

DigiKey

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此零件

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InfineonIRL7833SPBF

InfineonIRL7833STRLPBF

Price @ 1000

$ 2.51

$ 5.62

Stock

94,139

97,701

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

1.4 V

Rds On Max

3.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

4.17 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRL7833SPBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 150A;D2Pak;PD 140W;VGS +/-2

RS (Formerly Allied Electronics)

Single N-Channel 30 V 3.8 mOhm 32 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH 30V 150A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 30V 150A D2PAK

Win Source

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

Infineon

MOSFET, N, LOGIC, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:560mJ; Capacitance Ciss Typ:4170pF; Current Id Max:150A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:600A; Reverse Recovery Time trr Typ:42ns; SMD Marking:7833S; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.3V; Voltage Vgs th Min:1.4V

element14 APAC