供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-02
Lifecycle StatusEOL (Last Updated: 4 weeks ago)
LTB Date2026-09-14
LTD Date2027-03-14
相关零件
InfineonIRF3709STRLPBF
MOSFET N-CH 30V 90A D2PAK / Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK T/R
InfineonIRF3709SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 6.4Milliohms;ID 90A;D2Pak;PD 120W;VGS +/-20
STMicroelectronicsSTB70NF3LLT4
N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET MOSFET
STMicroelectronicsSTB95N3LLH6
N-channel 30 V, 3.7 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
STMicroelectronicsSTB85NF3LLT4
N-Channel 30V - 0.006Ohm - 85A - D2PAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
描述
由其分销商提供的 STMicroelectronics STB155N3LH6 的描述。
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
N-channel 30 V 3 Ohm Surface Mount Power MOSFET - D2PAK
Power Field-Effect Transistor, 80A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 30V, 80A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +175°C
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.8 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max3 mΩ
Resistance3 MΩ
Rise Time85 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time100 ns
Turn-On Delay Time15 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm