Infineon IRFSL7437PBF

Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - TO-262

40V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

MOSFET, N-CH, 40V, 195A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 250 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 1.4 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 78 / Turn-ON Delay Time ns = 19 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230