Infineon IRF1404LPBF

Name: Infineon IRF1404LPBF
Brand: Infineon
SKU: IRF1404LPBF

Mosfet, Power; N-ch; Vdss 40V; Rds(on) 0.0035 Ohm; Id 162A; TO-262; Pd 200W; Vgs +/-20V

$ 1.805

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRF1404LPBF	12,015					1.600	1.330	1.180	15h
RS (Formerly Allied Electronics)		IRF1404LPBF	0	1	Bulk	2.530	2.280	2.280	2.280	2.280	8h
Farnell		IRF1404LPBF	950	1		4.513*	2.768*	2.086*	1.582*	1.582*	1h
Microchip USA		IRF1404L	335	600	Tube				2.153	2.153	1d
Verical	2	IRF1404LPBF	9,000	188					1.663	1.475

数据表和文档

下载 Infineon IRF1404LPBF 的数据表和制造商文档。

IHS

Datasheet11 页22 年前

Datasheet12 页22 年前

Newark

DigiKey

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

Restocked

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-02-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF1404LPBF 的描述。

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;TO-262;PD 200W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262

Future Electronics

Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N CHANNEL MOSFET, 40V, 162A, TO-262; Tra; N CHANNEL MOSFET, 40V, 162A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

element14 APAC