供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
相关零件
InfineonIRF640NLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V
InfineonIRF5210LPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V
描述
由其分销商提供的 Infineon IRFSL4620PBF 的描述。
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET POWER MOSFET Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N CH, 200V, 24A, TO262; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:200V; On Resistance Rds(on):63.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:TO-262; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance77.5 mΩ
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time14.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.71 nF
Max Operating Temperature175 °C
Max Power Dissipation144 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation144 W
Rds On Max77.5 mΩ
Resistance63.7 MΩ
Rise Time22.4 ns
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time25.4 ns
Turn-On Delay Time13.4 ns
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm