Infineon IRFSL7440PBF

40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS

MOSFET N CH 40V 120A TO-262 / N-Channel 40 V 120A (Tc) 208W (Tc) Through Hole TO-262

Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - TO-262

Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

208W(Tc) 20V 3.9V@ 100µA 135nC@ 10 V 1individualNChannel 40V 2.5mΩ@ 100A,10V 120A 4.73nF@25V TO-262 Through hole mounting 10.2mm*4.5mm*9.45mm

MOSFET, N-CH, 40V, 120A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.