备用零件
Price @ 1000
$ 1.24
$ 1.91
Stock
244,095
213,320
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
Drain to Source Voltage (Vds)
75 V
75 V
Continuous Drain Current (ID)
195 A
195 A
Threshold Voltage
-
-
Rds On Max
2.6 mΩ
2.6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
13.66 nF
13.66 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-01-18
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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描述
由其分销商提供的 Infineon IRFS7730PBF 的描述。
MOSFET N-CH 75V 195A D2PAK N-Channel 75 V 195A (Tc) 375W (Tc) Surface Mount TO-263AB (D2PAK)
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK
TUBE / MOSFET, 75V, 195A, 2.6 Ohm, 271 nC, D2PAK
Brushed motor drive applications | MOSFET N-CH 75V 195A D2PAK
Trans MOSFET N-CH 75V 246A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
375W(Tc) 20V 3.7V@ 250µA 407nC@ 10 V 1individualNChannel 75V 2.6mΩ@ 100A,10V 195A 13.66nF@25V TO-263 SMD mount 6.5mm*6.22mm*2.3mm
MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vds)75 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.66 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.6 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2.6 mΩ
Rise Time120 ns
Schedule B8541290080
Turn-Off Delay Time180 ns
Turn-On Delay Time21 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm