Infineon IRFS7730PBF

Name: Infineon IRFS7730PBF
Brand: Infineon
SKU: IRFS7730PBF

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

$ 1.24

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFS7730PBF	31,000					1.390	1.240	1.170	1h
RS (Formerly Allied Electronics)	IRFS7730PBF	0	800	Bulk				9.040	9.040	17h
Farnell	IRFS7730PBF	0	1		3.937*	3.937*	2.016*	1.716*	1.716*	1d
Verical	IRFS7730PBF	31,000	216					1.550	1.463
Win Source	WS-IRFS7730PBF	1,400	9			6.723	4.483	4.483	4.483	2h

数据表和文档

下载 Infineon IRFS7730PBF 的数据表和制造商文档。

IHS

Datasheet12 页11 年前

Datasheet13 页11 年前

Upverter

Future Electronics

库存历史记录

3 个月趋势:

+0.00%

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InfineonIRFS7730PBF

InfineonIRFS7730TRLPBF

Price @ 1000

$ 1.24

$ 1.595

Stock

145,849

149,255

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

DPAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

195 A

Threshold Voltage

Rds On Max

2.6 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

375 W

Input Capacitance

13.66 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2014-01-18

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRFS7730PBF 的描述。

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

TUBE / MOSFET, 75V, 195A, 2.6 Ohm, 271 nC, D2PAK

Newark

Brushed motor drive applications | MOSFET N-CH 75V 195A D2PAK

Win Source

Trans MOSFET N-CH 75V 246A 3-Pin(2+Tab) D2PAK Tube

Verical

Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7

Farnell

Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

Infineon